2SJ620

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · · 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 ±20 -18 -72 125 937 -18 12.5 150 -55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Circuit Configuration 4 Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit °C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = -50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 W, IAR = -18 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2002-09-11 2SJ620 Electrical Characteristics (Ta = 25°C) ...