2SK1068

Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications · Impedance conversion. · Infrared sensor. Features · Small IGSS. · Small Crss. · Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1068] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDS IGSS IDSS VGS(off) | yfs | * : The 2SK1068 is classified by IDSS as follows (unit : µA) : IG=–10µA, VDS=0 VGS=–20V, VDS=0 VDS=10V, VGS=0 VDS=10V, ID=1µA VDS=10V, VGS=0, f=1kHz 30 10 80 60 11 180 150 12 300 (Note) Marking : B IDSS rank : 10, 11, 12 For CP package version, use the 2SK545. 1 : Source 2 : Drain 3 : Gate SANYO : MCP Ratings 40 –40 10 1 100 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ max Unit –40 V –500 pA 30* 300* µA –0.4 –1.5 –4.0 V 0.05 0.13 mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can hand...