2SK1103

Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features 2.9 –0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −65 20 10 150 150 −55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1 –0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 4L s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −10µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz 1.8 −65 −1.5 2.5 300 7 1.5 −3.5 min 0.2 typ max 6 −10 Unit mA nA V V mS Ω pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O 0.2 to 1 4LO P 0.6 to 1.5 4LP Q 1 to 3 4LQ R 2.5 to 6 4LR Marking Symbol 0 to 0.1 0.1 to 0.3 0.4±0.2 0.16 –0.06 +0.1 1 Silicon Junction FETs (Smal...