2SK1104

Silicon Junction FETs (Small Signal) 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 s Features q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −65 20 10 300 150 −55 to +150 Unit V mA mA mW °C °C 1.27 1.27 1 2 3 2.0±0.2 marking +0.2 0.45–0.1 2.54±0.15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −10µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz 1.8 −65 −1.5 2.5 250 7 1.3 1.5 −3.5 min 0.2 typ max 6 −10 Unit mA nA V V mS Ω pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O 0.2 to 1 P 0.6 to 1.5 Q 1 to 3 R 2.5 to 6 15.6±0.5 1 Silicon Junction FETs (Small Signal) PD  Ta 400 2.5 Ta=25˚C 350 2.0 2.0 VGS=0V 1.5 – 0.1V – 0.2V 1.0 – 0.3V – 0.4V 0.5 50 0 0 20 40 60 80 100 120 140 160 0 0 ...