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2SK1161 Dataheets PDF



Part Number 2SK1161
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK1161 Datasheet2SK1161 Datasheet (PDF)

2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current .

  2SK1161   2SK1161



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2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 10 30 10 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1161 V(BR)DSS 2SK1162 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF/dt = 100 A/µs I D = 5 A, VGS = 10 V, RL = 6 Ω I D = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1161 I DSS 2SK1162 Gate to source cutoff voltage Static Drain to source 2SK1161 RDS(on) on state resistance 2SK1162 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test See characteristic curves of 2SK1157, 2SK1158. 3 2SK1161, 2SK1162 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) Maximum Safe Operation Area 100 30 Drain Current ID (A) O is per Lim at ite ion d in by th R is A DS re a ( 10 µs 0 µs 80 10 3 1.0 0.3 0.1 D PW 10 on ) C = 1 O pe 10 m m s ra s tio (1 n 40 (T sh C ot = ) 25 °C ) Ta = 25°C 1 2SK1162 2SK1161 0 50 100 Case Temperature TC (°C) 150 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 θch–c (t) = γS (t) · θch–c θch–c = 1.25°C/W, TC = 25°C PDM D = PW T 0.03 1S 0.01 10 µ h ul ot P se T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 1 10 4 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value).


2SK1160 2SK1161 2SK1162


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