Document
2SK1161, 2SK1162
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1161, 2SK1162
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 10 30 10 100 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1161, 2SK1162
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1161 V(BR)DSS 2SK1162 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF/dt = 100 A/µs I D = 5 A, VGS = 10 V, RL = 6 Ω I D = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current
2SK1161 I DSS 2SK1162
Gate to source cutoff voltage
Static Drain to source 2SK1161 RDS(on) on state resistance 2SK1162
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test
See characteristic curves of 2SK1157, 2SK1158.
3
2SK1161, 2SK1162
Power vs. Temperature Derating 120 Channel Dissipation Pch (W) Maximum Safe Operation Area 100 30 Drain Current ID (A)
O is per Lim at ite ion d in by th R is A DS re a (
10 µs
0 µs
80
10 3 1.0 0.3 0.1
D
PW
10
on )
C
=
1
O
pe
10
m
m
s
ra
s
tio
(1
n
40
(T
sh
C
ot
=
)
25
°C
)
Ta = 25°C 1
2SK1162 2SK1161
0
50 100 Case Temperature TC (°C)
150
3 10 30 100 300 1,000 Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 θch–c (t) = γS (t) · θch–c θch–c = 1.25°C/W, TC = 25°C PDM D = PW T
0.03
1S 0.01 10 µ
h
ul ot P
se
T 100 µ 1m 10 m Pulse Width PW (s) 100 m
PW 1
10
4
Unit: mm
5.0 ± 0.3 15.6 ± 0.3 1.0
φ3.2 ± 0.2
4.8 ± 0.2 1.5
0.5
14.9 ± 0.2
19.9 ± 0.2
1.6 1.4 Max 2.0 2.8 18.0 ± 0.5
1.0 ± 0.2
2.0
0.6 ± 0.2
3.6
0.9 1.0
5.45 ± 0.5
5.45 ± 0.5
Hitachi Code JEDEC EIAJ Weight (reference value).