2SK1195

SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1195 ( F1E23 ) 230V 1.5A FEATURES œ Applicable to 4V drive. œ The static Rds(on) is small. œ Built-in ZD for Gate Protection. APPLICATION œ DC/DC converters œ Power supplies of DC 12-24V input œ Product related to Integrated Service Digital Network OUTLINE DIMENSIONS Case : E-pack (Unit : mm) RATINGS œAbsolute Maximum Ratings Tc i = 25Žj Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current DCj i ID Continuous Drain Current Peak) i IDP Continuous Source Current DCj i IS Total Power Dissipation PT Conditions Ratings -55`150 150 230 }20 1.5 3 1.5 10 Unit Ž V A W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbole V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions ID = 250μA, VGS = 0V VDS = 230V, VGS = 0V VGS = ±20V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VGS = 10V, ID = 1.5A, VDD = 200V VDS = 10V, VG...