2SK1336

2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D G 32 1 1. Source 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 ±20 0.3 1.2 0.3 400 150 –55 to +150 Unit V V A A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.22 — — — — — — — — — Typ — — — — — 1.3 1.8 0.35 33 17 5 2 4 18 16 0.9 45 Max — — ±10 50 2.0 1.7 2.5 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 0.3 A, VGS = 0 I F = 0.3 A, VGS = 0, diF/dt = 50 A/µs I D = 0.2 A, VGS = 10 V, RL = 150 Ω T...