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2SK1341 Dataheets PDF



Part Number 2SK1341
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK1341 Datasheet2SK1341 Datasheet (PDF)

2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temper.

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2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 6 15 6 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1341 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 — — 2.0 — 2.3 — — — — — — — — — Typ — — — — — 2.0 3.7 980 400 195 20 80 125 100 0.9 1000 Max — — ±10 250 3.0 3.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 6 A, VGS = 0 I F = 6 A, VGS = 0, diF/dt = 100 A/µs I D = 3 A, VGS = 10 V, RL = 10 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 3 A, VGS = 10 V *1 I D = 3 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1341 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 50 20 Drain Current ID (A) 10 O is per lim at ite ion d in b y th R is n) Maximum Safe Operation Area 10 10 ar µs 100 5 2 1 0.5 0.2 0.1 PW DC O pe 0 µs ea 1 m 10 (o = s DS m s (1 Sh t ra io n 50 ot ) = (T C 25 °C Ta = 25°C ) 0.05 0 50 100 Case Temperature TC (°C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 Pulse Test 10 V 6V Drain Current ID (A) 5.5 V 4 5 Typical Transfer Characteristics VDS = 20 V Pulse Test 8 Drain Current ID (A) 6 5V 4 4.5 V 2 VGS = 4 V 0 10 30 40 20 50 Drain to Source Voltage VDS (V) 3 2 75°C Ta = 25°C 1 –25°C 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1341 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 ID = 5 A 12 Static Drain to Source on State Resistance RDS (on) (Ω) 50 Pulse Test 20 10 5 VGS = 10 V 15 V Static Drain to Source on State Resistance vs. Drain Current 8 2A 4 1A 2 1 0.5 0.2 0 4 12 16 8 20 Gate to Source Voltage VGS (V) 0.5 1 2 5 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) VGS = 10 V Pulse Test 8 Forward Transfer Admittance yfs (S) 10 10 5 Forward Transfer Admittance vs. Drain Current –25°C TC = 25°C 75°C 6 ID = 5 A 4 1A 2A 2 1 0.5 VDS = 20 V Pulse Test 0.2 0.5 1 2 Drain Current ID (A) 5 2 0.2 0.1 0.05 0.1 0 –40 0 80 120 40 Case Temperature TC (°C) 160 5 2SK1341 Body to Drain Diode Reverse Recovery Time Reverse Recovery Time trr yfs (ns) 5,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 10,000 VGS = 0 f = 1 MHz Capacitance C (pF) 1,000 Ciss Typical Capacitance vs. Drain to Source Voltage 2,000 1,000 500 Coss 100 Crss 200 100 50 0.1 10 0.2 0.5 1 2 5 Reverse Drain Current IDR (A) 10 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics . VGS = 10 V, VDD = . 30 V PW = 2 µs, duty < 1% td (off) tf tr 50 td (on) Switching Time t (ns) 800 VDD = 250 V 400 V 600 V VDS VGS 16 200 100 600 12 400 8 20 10 5 0.1 200 600 V 400 V VDD = 250 V ID = 6 A 4 0 100 0 20 60 80 40 Gate Charge Qg (nc) 0.2 0.5 1 2 Drain Current ID (A) 5 10 6 2SK1341 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current IDR (A) 8 6 4 2 5V, 10 V VGS = 0, –5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25°C 1.0 0.05 θch–c (t) = γS (t) · θch–c θch–c = 1.25°C/W, TC = 25°C PDM PW 1 D = PW T 0.02 0.03 0.01 t Pulse ho 1S 0.01 10 µ 100 µ 1m 10 m Pulse Width PW (s) T 100 m 10 Switching Time Test Circuit Waveforms Vin Monitor Vout Monitor D.U.T RL 50 Ω Vin 10 V VDD . = . 30 V Vout 10% 10% 90% td (off) Vin 10% 90% td (on) 90% tr tf 7 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.


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