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2SK1433 Dataheets PDF



Part Number 2SK1433
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK1433 Datasheet2SK1433 Datasheet (PDF)

Ordering number:EN3571 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1433 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1433] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Diss.

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Ordering number:EN3571 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1433 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1433] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=20A Static Drain-to-Source ON-State Resistance RDS(on) ID=20A, VGS=10V (Note) Be careful in handling the 2SK1433 because it has no protection diode between gate and source. 5.45 20.0 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO3PB Ratings 100 ±20 30 120 100 2.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 100 V 100 µA ±100 nA 1.5 2.5 V 13 22 S 0.040 0.055 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3571–1/4 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Switching Time Test Circuit 2SK1433 Symbol Conditions Ciss Coss Crss td(on) tr td(off) tf VSD VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz ID=20A, VGS=10V, VDD=50V, RGS=50Ω ID=20A, VGS=10V, VDD=50V, RGS=50Ω ID=20A, VGS=10V, VDD=50V, RGS=50Ω ID=20A, VGS=10V, VDD=50V, RGS=50Ω IS=30A, VGS=0 Ratings min typ max Unit 2400 pF 700 pF 200 pF 30 ns 90 ns 320 ns 130 ns 1.8 V No.3571–2/4 2SK1433 No.3571–3/4 2SK1433 Specifications of any and all SANYO products described .


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