Document
Ordering number:EN3571
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1433
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1433]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
1.6 2.0
1.0 123 0.6
1.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=100V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=20A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=20A, VGS=10V
(Note) Be careful in handling the 2SK1433 because it has no protection diode between gate and source.
5.45
20.0
0.6
1 : Gate 2 : Drain 3 : Source SANYO : TO3PB
Ratings 100 ±20 30 120 100 2.5 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
100 V
100 µA
±100 nA
1.5 2.5 V
13 22
S
0.040 0.055 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3571–1/4
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage
Switching Time Test Circuit
2SK1433
Symbol
Conditions
Ciss
Coss
Crss
td(on) tr
td(off) tf
VSD
VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz ID=20A, VGS=10V, VDD=50V, RGS=50Ω ID=20A, VGS=10V, VDD=50V, RGS=50Ω ID=20A, VGS=10V, VDD=50V, RGS=50Ω ID=20A, VGS=10V, VDD=50V, RGS=50Ω IS=30A, VGS=0
Ratings min typ max
Unit
2400
pF
700 pF
200 pF
30 ns
90 ns
320 ns
130 ns
1.8 V
No.3571–2/4
2SK1433
No.3571–3/4
2SK1433
Specifications of any and all SANYO products described .