N-Channel Silicon MOSFET
Ordering number:EN3573
N-Channel Silicon MOSFET
2SK1435
Ultrahigh-Speed Switching Applications
Features
· Low ON-state...
Description
Ordering number:EN3573
N-Channel Silicon MOSFET
2SK1435
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2076B
16.0 3.4
[2SK1435]
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
2.8 2.0
1.0
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
5.45
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=100V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=20A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=20A, VGS=10V
(Note) Be careful in handling the 2SK1435 because it has no protection diode between gate and source.
3.5 20.4
2.0
0.6
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML
Ratings 100 ±20 30 120 60 3.0 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
100 V
100 µA
±100 nA
1.5 2.5 V
13 22
S
0.040 0.055 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can...
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