2SK1444

Ordering number:EN3447C N-Channel Silicon MOSFET 2SK1444 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2078B [2SK1444] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=0.5A Static Drain-to-Source ON-State Resistance RDS(on) ID=0.5A, VGS=10V (Note) Be careful in handling the 2SK1444 because it has no protection diode between gate and source. 2.4 14.0 1.2 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI (LS) Ratings 450 ±30 3 12 2.0 25 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 450 V 1.0 mA ±100 nA 2.0 3.0 V 1.1 2.2 S 2.0 2.6 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can ha...