N-Channel Silicon MOSFET
Ordering number:EN3465
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon...
Description
Ordering number:EN3465
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1462
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1462]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
1.6 2.0
1.0 123 0.6
1.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
5.45
20.0
0.6
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB
Ratings 900 ±30 8 16 150 2.5 150
–55 to +150
Unit V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=900V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=4A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=4A, VGS=10V
(Note) Be careful in handling the 2SK1462 because it has no protection diode between gate and source.
Ratings min typ max
Unit
900 V
1.0 mA
±100 nA
2.0 3.0 V
2.5 5.0
S
1.2 1.6 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high lev...
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