2SK1485

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1485 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly driven by ICs having a 5 V power source. Low on-state resistance RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A) Complementary to 2SJ199. PACKAGE DRAWING (Unit : mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 123 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0 0.41+–00..0053 1.Source 2.Drain 3.Gate MARK : NC ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V 5 Drain Current (DC) (TC = 25°C) ID(DC) ±1.0 A Drain Current (pulse) Note1 ID(pulse) ±2.0 A Total Power Dissipation (TA = 25°C) Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. Mounted on ceramic board of 16 cm2 × 0.7 mm EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additio...