2SK1529

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 −55~150 Unit V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Marking Type ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) JEDEC JEITA TOSHIBA ― ― 2-16C1B K1529 ※ Weight: 4.6 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Drain cut−off current Gate leakage current Drain−source breakdown voltage Drain−source saturation voltage Gate−source cut−off voltage (Note 2) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Symbol IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss Test Condition VDS = 180 V, VGS = 0 VDS = 0, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 6 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 3 A VDS = 30 V, VGS = 0, f = 1 MHz VDS = 30 V, VGS = 0, f = 1 MHz VDD ≈ 30 V, VGS = 0, f = 1 MHz Min — — 180 — 0.8 — — — — Typ. — — — 2.5 — 4.0 700 150 90 Max 1.0 ±0.5 — 5.0 2.8 — — — — pF Unit mA µA V V V S Note 1: Please use devices on condition that the channel temperature i...