DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1589
N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION
The 2SK1589, N-channel vertic...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK1589
N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION
The 2SK1589, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
As the MOSFET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids.
FEATURES
Directly by ICs having a 5 V power source. Not necessary to consider driving current because of its high
input impedance.
2.9 ±0.2 0.95 0.95
PACKAGE DRAWING (Unit: mm)
+0.1 –0.05
2.8 ±0.2 1.5
0.65
+0.1 –0.15
0.4
2
3
+0.1 –0.05
0.4
1 Marking
+0.1 –0.06
1.1 to 1.4 0.3
0.16
ORDERING INFORMATION
PART NUMBER 2SK1589
Marking: G17
PACKAGE SC-59 (Mini Mold)
0 to 0.1
1. Source 2. Gate 3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) Drain Current (pulse) Note
ID(DC) ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
100 ±20 ±100 ±200 200 150 −55 to +150
V V mA mA mW °C °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be a...