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2SK1589

NEC

N-CHANNEL MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1589 N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1589, N-channel vertic...


NEC

2SK1589

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Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1589 N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1589, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOSFET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly by ICs having a 5 V power source. Not necessary to consider driving current because of its high input impedance. 2.9 ±0.2 0.95 0.95 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 2 3 +0.1 –0.05 0.4 1 Marking +0.1 –0.06 1.1 to 1.4 0.3 0.16 ORDERING INFORMATION PART NUMBER 2SK1589 Marking: G17 PACKAGE SC-59 (Mini Mold) 0 to 0.1 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) Drain Current (pulse) Note ID(DC) ID(pulse) Total Power Dissipation PT Channel Temperature Tch Storage Temperature Tstg 100 ±20 ±100 ±200 200 150 −55 to +150 V V mA mA mW °C °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be a...




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