Document
2SK1620(L), 2SK1620(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1620(L), 2SK1620(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 150 ±20 10 40 10 50 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1620(L), 2SK1620(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
Drain to source breakdown voltage
V(BR)DSS 150
Gate to source breakdown voltage
V(BR)GSS ±20
Gate to source leak current
I.