2SK1637

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1637 2SK2422 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 650 ±30 4 16 4 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1637, 2SK2422 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1637 V(BR)DSS 2SK2422 V(BR)GSS I GSS 600 650 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 550 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.2 — — — — — — — — — — 1.8 2.0 3.5 600 140 25 8 30 60 35 0.9 300 3.0 2.4 2.6 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 4 A, VGS = 0 I F = 4 A, VGS = 0, diF/dt = 100 A/µs I D = 2 A, VGS = 10 V, RL = 15 Ω I D = 2 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown volta...