2SK1657

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for filter circuit. FEATURES Directly driven by ICs having a 3 V power supply. Has low Gate Leakage Current lGSS = ±5 nA MAX. (VGS = ±3.0 V) ORDERING INFORMATION PART NUMBER 2SK1657 Marking: G19 PACKAGE SC-59 (Mini Mold) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 2 3 +0.1 –0.05 0.4 1 Marking +0.1 –0.06 0.16 0 to 0.1 1. Source 2. Gate 3. Drain Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty Cycle ≤ 50% VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±7.0 ±100 ±200 200 150 −55 to +150 V V mA mA mW °C °C EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the...