2SK1663-L

2SK1663-L,S F-I Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage N-channel MOS-FET 800V 4Ω 3A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC Converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 800 3 12 3 ±20 80 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=800V Tch=25°C VGS=0V Tch=125°C VGS=±20V ID=1,5A ID=1,5A VDS=0V VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=2,1A VGS=10V RGS=50Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 800 2,1 Typ. 3,...