2SK1666

2SK1666 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Low voltage drive device  Can be driven from 4 V Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1666 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 ±20 45 180 45 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1666 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 20 — — — — — — — — — Typ — — — — — 0.016 0.022 32 3950 1920 360 30 180 630 290 1.3 140 Max — — ±10 250 2.5 0.02 0.035 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 45 A, VGS = 0 I F = 45 A, VGS = 0, diF/dt = 50 A/µ...