Document
2SK1697
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
UPAK 2 1 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SK1697
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 60 ±20 0.5 1.5 0.5 1 150 –55 to +150
Unit V V A A A W °C °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) 3. Marking is “EY”.
2
2SK1697
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.25 — — — — — — — — — Typ — — — — — 1.3 1.8 0.38 30 13 4 3 8 18 14 1 45 Max — — ±10 50 2.0 1.7 2.5 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 0.5 A, VGS = 0 I F = 0.5 A, VGS = 0, diF/dt = 50 A/µs I D = 0.3 A, VGS = 10 V, RL = 100 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.3 A, VGS = 10 V *1 I D = 0.3 A, VGS = 4 V *1 I D = 0.3 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
See characteristic curve of 2SK1336.
3
2SK1697
Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) Maximum Safe Operation Area 10 3 Drain Current I D (A) 1.0 1 0.3 0.1
10 µs n s n) 0 PW io a i (o µs t ra are DS 1 e = p is R m 1 O th by 0 s m D in ted s C i ( ( Tc O 1 lim Sh = pe ot 25 ra ) °C tion )
10
0.5
0.03 Ta = 25°C 0 50 100 150 0.01 0.1 0.3 1 3 10 30 100
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
4
Unit: mm
4.5 ± 0.1
0.4
1.8 Max φ1
1.5 ± 0.1 0.44 Max (2.5)
(1.5)
1.5 1.5 3.0
0.8 Min
0.44 Max
Hitachi Code JEDEC EIAJ Weight (reference value)
(0.4)
0.53 Max 0.48 Max
2.5 ± 0.1 4.25 Max
UPAK — Conforms 0.050 g
(0.2)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection wi.