DatasheetsPDF.com

2SK1697 Dataheets PDF



Part Number 2SK1697
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK1697 Datasheet2SK1697 Datasheet (PDF)

2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1697 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.

  2SK1697   2SK1697



Document
2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1697 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 ±20 0.5 1.5 0.5 1 150 –55 to +150 Unit V V A A A W °C °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) 3. Marking is “EY”. 2 2SK1697 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.25 — — — — — — — — — Typ — — — — — 1.3 1.8 0.38 30 13 4 3 8 18 14 1 45 Max — — ±10 50 2.0 1.7 2.5 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 0.5 A, VGS = 0 I F = 0.5 A, VGS = 0, diF/dt = 50 A/µs I D = 0.3 A, VGS = 10 V, RL = 100 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.3 A, VGS = 10 V *1 I D = 0.3 A, VGS = 4 V *1 I D = 0.3 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) See characteristic curve of 2SK1336. 3 2SK1697 Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) Maximum Safe Operation Area 10 3 Drain Current I D (A) 1.0 1 0.3 0.1 10 µs n s n) 0 PW io a i (o µs t ra are DS 1 e = p is R m 1 O th by 0 s m D in ted s C i ( ( Tc O 1 lim Sh = pe ot 25 ra ) °C tion ) 10 0.5 0.03 Ta = 25°C 0 50 100 150 0.01 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) 4 Unit: mm 4.5 ± 0.1 0.4 1.8 Max φ1 1.5 ± 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 ± 0.1 4.25 Max UPAK — Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection wi.


2SK1691 2SK1697 2SK1698


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)