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2SK1761 Dataheets PDF



Part Number 2SK1761
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK1761 Datasheet2SK1761 Datasheet (PDF)

2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temp.

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2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 12 48 12 75 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1761 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 — — 2.0 — 5.0 — — — — — — — — — Typ — — — — — 0.23 8.0 1100 440 68 20 65 100 44 1.0 200 Max — — ±10 250 3.0 0.35 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF / dt = 100 A / µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V*1 ID = 6 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1761 Maximum Safe Operation Area Power vs. Temperature Derating 160 100 10 30 Pch (W) 120 µ s 10 0 Drain Current I D (A) 10 D C PW = 1 µs 10 m s m Channel Dissipation s (1 O n tio ra pe 3 1 sh 80 ot ) c (T Ta = 25°C = °C 25 ) 40 0.3 0.1 1 0 50 100 Case Temperature 150 Tc (°C) 200 Operation in this area is limited by R DS (on) 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V 16 Drain Current I D (A) 6V Pulse Test 5.5 V Drain Current I D (A) 8 10 Typical Transfer Characteristics V DS = 10 V Pulse Test 12 5V 8 4.5 V 4 V GS = 4 V 6 Tc = 75°C 4 25°C – 25°C 2 0 4 8 12 16 Drain to Source Voltage V DS (V) 20 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 4 2SK1761 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test Drain to Source Saturation Voltage VDS (on) (V) Pulse Test Static Drain–Source on State Resistance R DS (on) (Ω ) 4 2 1 0.5 V GS = 10 V 5 Static Drain to Source on State Resistance vs. Drain Current 3 10 A 2 5A 1 ID = 2 A 0.2 15 V 0.1 0 4 8 12 16 20 0.05 0.5 1 2 5 10 20 50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 1.0 50 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test Forward Transfer Admittance |y fs| (S) 20 10 5 75°C 25°C 2 1 Tc = –25°C Static Drain–Source on State Resistance R DS (on) (Ω ) 0.8 Pulse Test V GS = 10 V 0.6 I D = 10 A 0.4 5A 0.2 2A 0 – 40 0 40 80 120 160 0.5 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 5 2SK1761 Body to Drain Diode Reverse Recovery Time 500 di / dt = 100 A / µ s V GS = 0, Ta = 25°C Reverse Recovery Time trr (ns) 200 Capacitance C (pF) Ciss 1000 100 50 10000 V GS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage Coss 20 10 5 0.2 100 Crss 10 0 0.5 1 2 5 10 20 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 Drain to Source Voltage V DS (V) I D = 12 A 400 V GS 300 V DS 200 V DD = 200 V 100 V 50 V 12 16 20 500 Gate to Source Voltage V GS (V) Switching Characteristics . V GS = 10 V,V DD = . 30 V PW = 2 µs, duty 1 % 200 Switching Time t (ns) td (off) 100 50 tr 20 10 tf td (on) 8 100 V DD = 200 V 100 V 50 V 8 16 24 32 40 4 0 0 0 5 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 6 2SK1761 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current IDR (A) 16 12 8 4 V GS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 1.67°C / W, Tc = 25°C PW D= T P DM T 100 µ 1m 10 m Pulse Width PW (S) 100 m PW Tc = 25°C 1.0 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 µ ho 1s tP uls e 1 10 7 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 .


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