2SK1832

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1831 K1832 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 10 30 10 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1831, 2SK1832 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1831 K1832 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF / dt = 100 A / µs V Ω I D = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V*1 ID = 5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6 Ω Unit V Test Conditions I D = 10 mA, VGS = 0 Gate to source breakdow...