2SK1836, 2SK1837
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance...
2SK1836, 2SK1837
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter
Outline
TO-3PL
D G
1
2
3
S
1. Gate 2. Drain (Flange) 3. Source
2SK1836, 2SK1837
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage K1836 K1837 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 50 200 50 250 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1836, 2SK1837
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage K1836 K1837 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 — — — — — — — — — — 0.08 0.085 35 8150 2100 180 80 250 550 220 1.1 620 3.0 0.10 0.11 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 100 A / µs V Ω I D = 1 mA, VDS = 10 V I D = 25 A VGS= 10 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Ω Unit V Test conditions I D = 10 mA, VGS = 0...