2SK1837

2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1836, 2SK1837 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1836 K1837 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 50 200 50 250 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1836, 2SK1837 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1836 K1837 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 — — — — — — — — — — 0.08 0.085 35 8150 2100 180 80 250 550 220 1.1 620 3.0 0.10 0.11 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 100 A / µs V Ω I D = 1 mA, VDS = 10 V I D = 25 A VGS= 10 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Ω Unit V Test conditions I D = 10 mA, VGS = 0...