2SK1869S

2SK1869(L), 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 350 ±30 7 28 7 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1869(L), 2SK1869(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 350 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 0.6 5.0 635 230 40 10 50 60 40 0.95 240 Max — — ±10 250 3.0 0.8 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS =280 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static ...