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2SK1880 Dataheets PDF



Part Number 2SK1880
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK1880 Datasheet2SK1880 Datasheet (PDF)

2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temp.

  2SK1880   2SK1880


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2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 1.5 3.0 1.5 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1880(L), 2SK1880(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 — — 2.0 — 0.85 — — — — — — — — — Typ — — — — — 6.5 1.4 250 55 8 10 25 35 30 0.95 350 Max — — ±10 100 3.0 8.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V µs I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 10 V*1 ID = 1 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1880(L), 2SK1880(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 10 Drain Current I D (A) 3 1 O a pe by rea rat R is ion DS lim in (o ite th n) d is 10 Maximum Safe Operation Area 10 0µ s µ s 20 1 PW = O pe ra tio n DC m s 10 s m 0.3 0.1 0.03 (1 o sh 10 (T c t) = 25 °C ) 0 50 100 150 Ta = 25°C 0.01 0.1 0.3 1 3 10 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics 2.0 5V Drain Current I D (A) 1.6 1.2 0.8 0.4 4V 10 V Pulse Test Drain Current I D ( A ) 4.5 V 2.0 1.6 1.2 0.8 0.4 Typical Transfer Characteristics Pulse Test VDS = 20 V VGS = 3.5 V 75°C Tc = 25°C –25°C 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4 2SK1880(L), 2SK1880(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS (on) (V) Pulse Test 16 12 8 4 I D = 1.5 A Static Drain to Source on State Resistance R DS (on) ( Ω) 20 Static Drain to Source on State Resistance vs. Drain Current 100 50 20 10 5 2 1 0.05 0.1 0.2 VGS = 10 V Pulse Test 1A 0.5 A 0 4 8 12 16 20 0.5 1 2 5 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 20 Static Drain to Source on State Resistance R DS (on) ( Ω) Forward Transfer Admittance | yfs | (S) 16 12 ID = 1 A 8 0.5 A 4 5 2 1 0.5 Forward Transfer Admittance vs. Drain Current Pulse Test V DS = 20 V Tc = –25°C 75°C 0.2 0.1 0.05 0.02 0.05 0.1 0.2 25°C –40 0 40 80 120 160 0.5 1 2 Case Temperature Tc (°C) Drain Current I D (A) 5 2SK1880(L), 2SK1880(S) Body to Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 5000 2000 1000 500 200 100 50 0.1 0.2 1 0.5 1 2 5 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) di/dt = 100 A/µs VGS = 0 Ta = 25°C Pulse Test 1000 Ciss Capacitance C (pF) 100 Coss 10 Crss Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Drain Current I DR (A) Switching Characteristics Dynamic Input Characteristics Drain to Source Voltage VDS (V) I D = 1.5 A 800 600 400 200 VDS VDD = 100 V 250 V 400 V 4 8 12 16 VGS VDD = 100 V 250 V 400 V 16 12 8 4 0 20 Gate to Source Voltage VGS (V) 1000 20 500 200 100 50 20 10 5 0.1 0.2 tr tf t d (on) t d (off) VGS = 10 V PW = 2 µ s duty < = 1% VDD = : 30 V Switching Time t (ns) 0 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 6 2SK1880(L), 2SK1880(S) Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Drain Current I DR (A) Pulse Test 1.6 1.2 0.8 0.4 VGS = 10 V 0 V, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (A) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 µ 1s hot Pul se Tc = 25°C θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 6.25°C / W. Tc = 25°C PW D= T P DM T PW 0.01 100 µ 1m 10 m Pulse Width PW (S) 100 m 1 10 7 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDE.


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