2SK1889

Ordering number:EN4648 N-Channel Silicon MOSFET 2SK1899 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the assembling time for 2SK1899- applied equipment. · High-density surface mount applications. · Small size of 2SK1899-applied equipment. Package Dimensions unit:mm 2090A [2SK1899] 10.2 4.5 1.3 1.5max 8.8 3.0 9.9 0.8 1.4 1 23 0.8 1.2 2.55 2.55 1.35 0 to 0.3 0.4 Specifications 2.55 2.55 2.7 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Current Symbol VDSS VGSS ID IDP PD Tch Tstg IAV Conditions PW≤10µs, duty cycle≤1% Tc=25°C VDS=30V, VGS=10V, L=0.1mH, Tc=25°C, Single pulse Ratings 60 ±20 18 72 1.65 60 150 –55 to +150 Unit V V A A W W ˚C ˚C 18 A Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A Ratings min typ max Unit 60 V ±20 V 100 µA ±10 µA 1.0 2.0 V 8 13 S Continu...