N-Channel Silicon MOSFET
Ordering number:EN4648
N-Channel Silicon MOSFET
2SK1899
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Description
Ordering number:EN4648
N-Channel Silicon MOSFET
2SK1899
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following
possible. · Reduction in the assembling time for 2SK1899-
applied equipment. · High-density surface mount applications. · Small size of 2SK1899-applied equipment.
Package Dimensions
unit:mm 2090A
[2SK1899] 10.2 4.5 1.3
1.5max 8.8
3.0 9.9 0.8
1.4
1 23 0.8 1.2 2.55 2.55
1.35
0 to 0.3 0.4
Specifications
2.55 2.55
2.7
1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Avalanche Current
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
IAV
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
VDS=30V, VGS=10V, L=0.1mH, Tc=25°C, Single pulse
Ratings 60
±20 18 72
1.65 60
150 –55 to +150
Unit V V A A W W ˚C ˚C
18 A
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A
Ratings min typ max
Unit
60 V
±20 V
100 µA
±10 µA
1.0 2.0 V
8 13
S
Continu...
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