2SK1924

Ordering number:EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=140ns). Package Dimensions unit:mm 2052C [2SK1924] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Conditions Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0 Zero-Gate Votlage Drain Current IDSS VDS=480V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=3A Static Drain-to-Source On-State Resistance RDS(on) ID=3A, VGS=10V (Note) Be careful in handling the 2SK1924 because it has no protection diode between gate and source. 2.55 0.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220AB Ratings 600 ±30 6 24 1.75 70 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 600 V 1.0 mA ±100 nA 2.0 3.0 V 2.3 4.5 S 1.1 1.5 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabi...