2SK1931

SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1931 ( F5E20 ) 200V 5A FEATURES œ Applicable to 4V drive. œ The static Rds(on) is small. œ Built-in ZD for Gate Protection. APPLICATION œ DC/DC converters œ Power supplies of DC 12-24V input œ Product related to Integrated Service Digital Network OUTLINE DIMENSIONS Case : E-pack (Unit : mm) RATINGS œAbsolute Maximum Ratings Tc i = 25Žj Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current DCj i ID Continuous Drain Current Peak) i IDP Continuous Source Current DCj i IS Total Power Dissipation PT Conditions Ratings -55`150 150 200 }30 5 10 5 20 Unit Ž V A W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 1mA, VGS = 0V VDS = 200V, VGS = 0V VGS = ±30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VGS = 10V, ID = 5A, VDD = 150V VDS = 10V, VGS = 0V, f = ...