2SK1933

2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 10 30 10 150 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1933 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 900 ±30 — — 2.0 — 4.5 — — — — — — — — — Typ — — — — — 0.9 7 2620 830 320 30 140 285 170 0.9 1600 Max — — ±10 250 3.0 1.2 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V*1 ID = 5 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output ...