2SK1959

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 Gate can be driven by 1.5 V Low ON resistance RDS(on) = 3.2 Ω MAX. RDS(on) = 0.5 Ω MAX. @ VGS = 1.5 V, ID = 50 mA @ VGS = 4.0 V, ID = 1.0 A 0.8 MIN. FEATURES S 0.42 ±0.06 1.5 D G 0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03 –0.05 Marking: NQ EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW ≤ 10 ms, duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 ± 7.0 ± 2.0 ± 4.0 2.0 150 –55 to +150 UNIT V V A A W ˚C ˚C Document No. D11222EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 4.0 ±0.25 2.5 ±0.1 © 1996 2SK1959 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State...