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2SK2054 Dataheets PDF



Part Number 2SK2054
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2054 Datasheet2SK2054 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2054 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2054 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small-sign.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2054 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2054 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.25 Ω MAX. @VGS = 4 V, ID = 1.5 A RDS(on) = 0.20 Ω MAX. @VGS = 10 V, ID = 1.5 A 1.0 0.5 ±0.1 S D 0.85 ±0.1 G 5.4 ±0.25 0.55 0.5 ±0.1 0.4 ±0.05 2.1 4.2 Marking: NA2 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 7.5 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 60 ± 20 ± 3.0 ± 6.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 –55 to +150 W ˚C ˚C Document No. D11225EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SK2054 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 10 V, ID = 1.5 A VGS(on) = 10 V, RG = 10 Ω RL = 6 Ω TEST CONDITIONS VDS = 60 V, VGS = 0 VGS = ± 20 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.5 A VGS = 4 V, ID = 1.5 A VGS = 10 V, ID = 1.5 A VDS = 10 V, VGS = 0, f = 1.0 MHz 0.8 2.0 0.18 0.15 530 200 50 6 80 70 25 0.25 0.20 1.3 MIN. TYP. MAX. 1.0 ± 10 2.0 UNIT µA µA V S Ω Ω pF pF pF ns ns ns ns 2 2SK2054 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10 PW FORWARD BIAS SAFE OPERATING AREA dT - Derating Factor - % 80 ID - Drain Current - A 5 = 1 10 2 1 0.5 10 0 s m m s 60 m s 40 DC 20 0.2 Single Pulse 0.1 0 30 60 90 120 TA - Ambient Temperature - ˚C 150 0 2 5 10 20 50 VDS - Drain to Source Voltage - V 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS 10 VDS = 10 V 10 V 8V 4V 2.5 2.0 ID - Drain Current - A ID - Drain Current - A 1 1.5 3 V 0.1 TA = 75 ˚C 25 ˚C –25 ˚C 1.0 0.01 0.5 VGS = 2 V 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V 1.0 0.001 0 0.5 1 1.5 2 VGS - Gate to Source Voltage - V 2.5 10 |yfs| - Forward Transfer Admittance - S RDS(on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.7 VGS = 4 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 TA = 75 ˚C 25 ˚C –25 ˚C 3 1 TA = –25 ˚C 25 ˚C 75 ˚C 0.1 0.3 0.03 0.01 0.001 0.003 0.01 0.03 0.1 ID - Drain Current - A 0.3 1 0.03 0.1 0.3 1 ID - Drain Current - A 3 10 3 2SK2054 0.7 VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 TA = 75 ˚C 25 ˚C –25 ˚C 0.03 0.1 0.3 1 ID - Drain Current - A 3 10 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.5 0.4 ID = 3 A 1.5 A 0.3 0.2 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 20 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 Ciss, Crss, Coss - Capacitance - pF ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 500 Ciss 1 200 100 50 0.1 Coss 0.01 20 10 0.001 0.2 VGS = 0 f = 1 MHz 1 Crss 100 0.4 0.6 0.8 1.0 VSD - Source to Drain Voltage - V 1.2 2 5 10 20 50 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 td(on), tr, td(off), tf - Switching Time - ns tr td(off) tf 50 20 10 5 td(on) 2 1 0.1 VDD = 10 V VGS(on) = 10 V 0.2 0.5 1 2 ID - Drain Current - A 5 10 4 2SK2054 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 2SK2054 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights.


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