2SK2090

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 2.1 ±0.1 1.25 ±0.1 2.0 ±0.2 0.3 +0.1 –0 0.65 0.65 G FEATURES Gate can be driven by 2.5 V Because of its high input impedance, there’s no need to consider drive current 0.3 Marking 0.9 ±0.1 Marking: G22 EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode 0 to 0.1 PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW ≤ 10 ms, duty cycle ≤ 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATING 50 ± 7.0 ± 100 ± 200 150 150 –55 to +150 UNIT V V mA mA mW ˚C ˚C Document No. D11228EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 0.15 –0.05 +0.1 0.3 –0.05 +0.1 S D © 1996 2SK2090 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance...