DatasheetsPDF.com

2SK2098-01MR

Fuji Electric

N-channel MOS-FET

2SK2098-01MR FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forw...


Fuji Electric

2SK2098-01MR

File Download Download 2SK2098-01MR Datasheet


Description
2SK2098-01MR FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 150V 0,08Ω 20A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 150 150 20 80 ±20 50 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V Tch=25...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)