DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2109
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching and DC/DC converters. characteristics and is ideal for driving the actuator, such as motors
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1 1.6 ± 0.2
2.5 ± 0.1 4.0 ± 0.25
1.5 ± 0.1
0.8 MIN.
S 0.42 ±0.06
D
G
FEATURES
Low ON resistance RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A High switching speed ton + toff < 100 ns Low parasitic capacitance
0.42 0.47 ±0.06 1.5 ±0.06 3.0
0.41+0.03 –0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G) Gate protection diode Source (S)
Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate
Marking: NS
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 60 ± 20 ± 0.5 ± 1.0 UNIT V V A A
Total Power Dissipation Channel Temperature Storage Temperature
PT Tch Tstg
2.0 150 –55 to +150
W ˚C ˚C
Document No. D11229EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan
1996
2SK2109
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Ad...