2SK2109

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching and DC/DC converters. characteristics and is ideal for driving the actuator, such as motors PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 2.5 ± 0.1 4.0 ± 0.25 1.5 ± 0.1 0.8 MIN. S 0.42 ±0.06 D G FEATURES Low ON resistance RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A High switching speed ton + toff < 100 ns Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03 –0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: NS ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 60 ± 20 ± 0.5 ± 1.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 –55 to +150 W ˚C ˚C Document No. D11229EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 1996 2SK2109 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Ad...