2SK211

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 2SK211 FM Tuner Applications VHF Band Amplifier Applications Unit: mm Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admitance: |Yfs| = 9 mS (typ.) Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating −18 10 150 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking JEDEC ― JEITA SC-59 TOSHIBA 2-3F1C Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol Test Condition ...