TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
2SK2145
Audio Frequency Low Noise Amplifier Ap...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK2145
2SK2145
Audio Frequency Low Noise Amplifier Applications
Including two devices in SM5 (super mini type with 5 leads.) High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 kΩ High input impedance: IGSS = −1 nA (max) at VGS = −30 V
Marking
Pin Assignment (top view)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Gate-drain voltage Gate current
Drain power dissipation
Junction temperature Storage temperature
Symbol
VGDS IG PD (Note 1) Tj Tstg
Rating −50 10
300
125 −55~125
Unit V mA
mW
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-3L1C
Weight: 0.016 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating
1 2007-11-01
2SK2145
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Chara...