2SK2157

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2157 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 3.65 ±0.1 5.4 ±0.25 1.5 ±0.1 0.55 FEATURES New package intermediate between small-signal and power models Can be directly driven by output of 5-V IC Low ON resistance RDS(on) ≤ 0.15 Ω @VGS = 4 V, ID = 2.5 A RDS(on) ≤ 0.10 Ω @VGS = 10 V, ID = 2.5 A 1.0 S 0.5 ±0.1 D G 0.5 ±0.1 2.1 4.2 0.85 ±0.1 0.41 ±0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Marking: NA4 Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 7.5 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 30 ± 20 ± 5.0 ± 10.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 –55 to +150 W ˚C ˚C Document No. D11233EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SK2157 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage C...