2SK2159

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-voltage portable systems such as headphone stereo sets and camcorders. 0.8 MIN. PACKAGE DIMENSIONS (in millimeters) 4.5 ± 0.1 1.6 ± 0.2 4.0 ± 0.25 2.5 ± 0.1 1.5 ± 0.1 1 0.42 ± 0.06 2 3 FEATURES Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03 –0.05 EQUIVALENT CIRCUIT 2 3 Gate protection diode 1 Internal diode PIN CONNECTION 1. Source (S) 2. Drain (D) Marking: NW 3. Gate (G) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % Mounted on 16 cm2 × 0.7 mm ceramic substrate. VGS = 0 VDS = 0 TEST CONDITIONS RATINGS 60 ± 14 ± 2.0 ± 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 –55 to +150 W ˚C ˚C Document No. D11235EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan © 1996 2SK2159 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate C...