2SK2168

Ordering number:ENN4555 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2168 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK2168] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Mounted on ceramic board (250mm2× 0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 VDS=250V, VGS=0 VGS=±18V, VDS=0 VDS=10V, ID= 1mA VDS=10V, ID=400mA ID=400mA, VGS=10V 0.4 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom View) Ratings 250 ±20 800 3.2 3.5 1.5 150 –55 to +150 Unit V V mA A W W ˚C ˚C Ratings min typ max Unit 250 V 100 µA ±10 µA 1.5 2.5 V 0.6 0.9 S 3.5 5 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other ...