2SK2169

Ordering number:ENN4556 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2169 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK2169] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications 2.54 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 VDS=250V, VGS=0 VGS=±18V, VDS=0 VDS=10V, ID= 1mA VDS=10V, ID=200mA ID=200mA, VGS=10V 1.0 0.6 0.5 23 2.54 0.45 1 : Source 2 : Drain 3 : Gate SANYO : NMP Ratings 250 ±20 400 1.6 1 150 –55 to +150 Unit V V mA A W ˚C ˚C Ratings min typ max Unit 250 V 100 µA ±10 µA 1.5 2.5 V 0.4 0.6 S 3.5 5 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result...