N-Channel Junction Silicon FET
Ordering number:ENN5202
N-Channel Junction Silicon FET
2SK2218
High-Frequency Low-Noise Amplifier Applications
Feature...
Description
Ordering number:ENN5202
N-Channel Junction Silicon FET
2SK2218
High-Frequency Low-Noise Amplifier Applications
Features
· Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |. · Small Ciss.
Package Dimensions
unit:mm 2125
[2SK2218]
4.5 1.6
1.5
1.0 2.5 4.25max
Specifications
0.4 0.5
32 1.5 3.0
1
0.75
0.4
1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View)
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current
Symbol
VDSX VGDS
IG ID
Allowable Power Dissipation
PD
Junction Temperature Storage Temperature
Tj Tstg
Conditions Mounted on ceramic board (250mm2× 0.8mm)
Ratings 15
–15 10
100 400 800 150 –55 to +150
Unit V V mA mA
mW mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance
V(BR)GDS IGSS IDSS**
VGS(off) | yfs |
** : Pulse Test Pulse Width≤2mS * : The 2SK2218 is classified by IDSS as follows (unit : mA).
IG=–10µA, VDS=0 VGS=–10V, VDS=0 VDS=5V, VGS=0 VDS=5V, ID=100µA VDS=5V, VGS=0, f=1kHz
40 3 52 48 4 63 57 5 75
Marking : KN IDSS ranks : 3, 4, 5
Ratings min typ max
Unit
–15 V
–1.0 nA
40* 75* mA
–1.2 –2.6 –4.5 V
24 32
mS
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Any and all SANYO products described or contained herein do not have specifications that can handle applica...
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