2SK2218

Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |. · Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) Ratings 15 –15 10 100 400 800 150 –55 to +150 Unit V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDS IGSS IDSS** VGS(off) | yfs | ** : Pulse Test Pulse Width≤2mS * : The 2SK2218 is classified by IDSS as follows (unit : mA). IG=–10µA, VDS=0 VGS=–10V, VDS=0 VDS=5V, VGS=0 VDS=5V, ID=100µA VDS=5V, VGS=0, f=1kHz 40 3 52 48 4 63 57 5 75 Marking : KN IDSS ranks : 3, 4, 5 Ratings min typ max Unit –15 V –1.0 nA 40* 75* mA –1.2 –2.6 –4.5 V 24 32 mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applica...