N-Channel Junction Silicon FET
Ordering number:ENN4755
N-Channel Junction Silicon FET
2SK2219
Capacitor Microphone Applications
Features
· Ultrasmall...
Description
Ordering number:ENN4755
N-Channel Junction Silicon FET
2SK2219
Capacitor Microphone Applications
Features
· Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.
· Especially suited for use in audio, telephone capacitor microphones.
· Excellent voltage characteristic. · Excellent transient characteristic. · Adoption of FBET process.
Package Dimensions
unit:mm 2058A
[2SK2219]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VGDO IG ID PD Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance
V(BR)GDO IDSS
VGS(off) | yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
* : The 2SK2219 is classified by IDSS as follows : (unit : µA)
IG=–100µA VDS=5V, VGS=0 VDS=5V, ID=1µA VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz
140 21 240 210 22 350 320 23 500
Marking : D IDSS rank : 21, 22, 23
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings –20 10 1 100 150
–55 to +150
Unit V mA mA
mW ˚C ˚C
Ratings min typ max
Unit
–20 V
140*
500* µA
–0.2 –0.6 –1.2 V
0.5 1,2
mS
4.1 pF
0.88 pF
Continued on next page.
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