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2SK2219

Sanyo Semicon Device

N-Channel Junction Silicon FET

Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features · Ultrasmall...


Sanyo Semicon Device

2SK2219

File Download Download 2SK2219 Datasheet


Description
Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features · Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim. · Especially suited for use in audio, telephone capacitor microphones. · Excellent voltage characteristic. · Excellent transient characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2058A [2SK2219] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDO IDSS VGS(off) | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss * : The 2SK2219 is classified by IDSS as follows : (unit : µA) IG=–100µA VDS=5V, VGS=0 VDS=5V, ID=1µA VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz 140 21 240 210 22 350 320 23 500 Marking : D IDSS rank : 21, 22, 23 1 : Source 2 : Drain 3 : Gate SANYO : MCP Ratings –20 10 1 100 150 –55 to +150 Unit V mA mA mW ˚C ˚C Ratings min typ max Unit –20 V 140* 500* µA –0.2 –0.6 –1.2 V 0.5 1,2 mS 4.1 pF 0.88 pF Continued on next page. Any and all SANYO products described or c...




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