N-channel MOS-FET
2SK2248-01L,S
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forwa...
Description
2SK2248-01L,S
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
30V
0,06Ω
10A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 10 40 ±16 20 150 -55 ~ +150 Unit V V A A V W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=5A VGS=4V ID=5A VGS=10V ID=5A VDS=10V VDS=25V VGS=0V f=1MHz VCC=10V ID=10A VGS=10V RGS=25 Ω Tch=25°C L=1...
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