N-Channel Silicon MOSFET
Ordering number:ENN4753
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silic...
Description
Ordering number:ENN4753
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK2260
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK2260] 4.5 1.6 1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on ceramic board (250mm2× 0.8mm)
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Marking : KO
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on)
ID=1mA, VGS=0 VDS=150V, VGS=0 VGS=±18V, VDS=0 VDS=10V, ID= 1mA VDS=10V, ID=600mA ID=600mA, VGS=10V
0.4 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Ratings 150 ±20 1.2 4.8 3.5 1.5 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
150 V
100 µA
±10 µA
1.5 2.5 V
0.8 1.1
S
1.6 2.2 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control syst...
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