2SK2341

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2 FEATURES φ3.2 ± 0.2 Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 250 ± 30 ± 11 ± 44 35 2.0 –55 to +150 150 11 320 V V A A W W °C °C A mJ 1 2 3 0.7 ± 0.1 2.54 TYP. 13.5 MIN. 0.65 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy *PW ≤ 10 µs, Duty Cycle ≤ 1 % **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 1.3 ± 0.2 1.5 ± 0.2 2.54 TYP. 12.0 ± 0.2 LOW Ciss Ciss = 1090 pF TYP. 15.0 ± 0.3 2.5 ± 0.1 Tstg Tch IAS** EAS** 1. Gate 2. Drain 3. Source MP-45F(SIOLATED TO-220) Drain (D) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source (S) Gate (G) Body diode Document No. TC-2511 (O.D. No. TC–8070) Da...