2SK2354

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3. 3.2 ±0.2 2.7 ±0.2 4.5 ±0.2 FEATURES Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) Low Ciss Ciss = 670 pF TYP. High Avalanche Capability Ratings Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 15.0 ±0.3 4 ±0.2 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 13.5 MIN. 12.0 ±0.2 3 ±0.1 2.5 ±0.1 0.65 ±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2353/2354) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 4.5 ± 18 30 2.0 150 4.5 17.4 V V A A W W ˚C A mJ Gate 1 2 3 1. Gate 2. Drain 3. Source MP-45F (ISOLATED TO-220) Drain –55 to +150 ˚C Body Diode Source ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information i...