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2SK2356 Dataheets PDF



Part Number 2SK2356
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2356 Datasheet2SK2356 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ±30 ± 5.0 ±20 50 1.5 150 5.0 17.4 V V A A W 1.3 ±0.2 0.75 ±0.1 2.54 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4.8 MAX. 1.3 ±0.2 1.5 MAX. 4 °C A mJ –55 to +150 °C 1.0 ±0.5 W 1.4 ±0.2 1.0 ±0.3 (2.54) (2.54) 1 2 3 8.5 ±0.2 R) .5 R) (0 0.8 ( 1.1 ±0.2 3.0 ±0.5 0.5 ±0.2 MP-25Z (TO-220 SURFACE MOUNT TYPE) Drain 2.8 ±0.2 ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 1. 2. 3. 4. Gate Drain Source Fin (Drain) Body Diode Gate Source The information in this document is subject to change without notice. Document No. D11391EJ3V0DS00 (3rd edition) (Previous No. TC-2500) Date Published March 1998 N CP(K) Printed in Japan © 1994 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.9 1.0 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 670 140 18 11 8 40 8 20 4.5 9 1.0 270 1.0 2.5 1.0 100 ± 100 MAX. 1.4 1.5 3.5 V S UNIT mΩ TEST CONDITIONS VGS = 10 V ID = 2.5 A 2SK2355 2SK2356 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS = 10 V VDD = 150 V RG = 10 Ω RL = 60 Ω ID = 5.0 A VDD = 400 V VGS = 10 V IF = 5.0 A, VGS = 0 IF = 5.0 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V Ω 50 Ω L VDD Test Circuit 2 Switching Time D.U.T. RL VGS VDD Wave Form VGS 10 % 0 VGS (on) 90 % PG. RG RG = 10 Ω ID 90 % 90 % 10 % 0 td (on) ton tr BVDSS IAS ID VDD VDS VGS 0 t t = 1 µs Duty Cycle ≤ 1 % ID Wave Form ID 10 % td (off) toff tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 60 50 40 30 20 10 80 60 40 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc - Case Temperature - °C Tc - Case Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse) 10 d ite ) im 0 V L ) n (o =1 S S RD t VG ID (DC) (a Po PW = ID - Drain Current - A 10 10 0 s 0µ ID - Drain Current - A 1. 8 VGS = 20 V 10 V 8V 6V s s µ 6 1 we 10 m µ m s 1.0 rD s iss ipa 2SK2355 2SK2356 ite 4 tio n 0.1 1 TC = 25 °C Single Pulse 10 Lim 2 d 100 1000 0 4 8 12 16 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 Pulsed VDS - Drain to Source Voltage - V 10 ID - Drain Current - A 1 0.1 0.05 0 5 Ta = –25 °C 25 °C 75 °C 125 °C 10 15 VGS - Gate to Source Voltage - V 3 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z rth(ch-c) (t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 Rth(ch-a) = 83 °C/W 10 1 Rth(ch-c) = 2.5 °C/W 0.1 Tc = 25 °C Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s IyfsI - Forward Transfer Admittance - S 100 Ta = –25 °C 25 °C 75 °C 125 °C RDS(on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed 10 2.0 ID = 5 A 2.5 A 1A 1.0 1.0 0.1 1.0 10 100 .


2SK2355-Z 2SK2356 2SK2356-Z


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