2SK2361

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) FEATURES Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) 1.0 15.7 MAX. 4 3.2±0.2 Low Ciss Ciss = 1050 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2361/2SK2362) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 10 ± 40 100 3.0 150 10 142 V V A A W W ˚C 20.0±0.2 6.0 1 19 MIN. 3.0±0.2 2 3 2.2±0.2 5.45 MP-88 Drain –55 to +150 ˚C A mJ Gate Body Diode ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Source Document No. TC-2502 (O. D. No. TC-8061) Date Published December 1994 P Printed in Japan © 1995 2SK2361/2SK2362 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.7 0.8 Gate to Source Cutoff Voltage Forward Transfer Admittance ...